000 00475nam a2200157Ia 4500
008 201210s9999||||xx |||||||||||||| ||und||
020 _a978-94-007-7663-0
100 _aFranco
_947767
245 0 _aReliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
_p47
250 _a1
264 _bSpringer Netherlands
_c2014
_dMonograph
500 _aFulltext
546 _aENG
856 _uhttp://link.springer.com/10.1007/978-94-007-7663-0
942 _cEBK
999 _c29668
_d29668